Conductive-bridging random access memory: challenges and opportunity for 3D architecture

Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture

(2014) Siddheswar Maikap et al.   Nanoscale Research Letters

Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells

(2013) Wouter Devulder et al.   ACS Applied Materials & Interfaces

Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte

(2013) Sheikh Ziaur Rahaman et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories

(2013) Sheikh Rahaman et al.   Nanoscale Research Letters

TaOx-based resistive switching memories: prospective and challenges

(2013) Amit Prakash et al.   Nanoscale Research Letters

Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film

(2012) S. Z. Rahaman et al.   APPLIED PHYSICS LETTERS

Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament

(2012) S. Z. Rahaman et al.   JOURNAL OF APPLIED PHYSICS

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

(2012) Sheikh Rahaman et al.   Nanoscale Research Letters

Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte

(2012) Sheikh Rahaman et al.   Nanoscale Research Letters

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

(2011) L. Goux et al.   APPLIED PHYSICS LETTERS

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

(2011) Kuk-Hwan Kim et al.   NANO LETTERS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

(2010) S. Z. Rahaman et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Nonvolatile Crossbar Switch Using $\hbox{TiO}_{x}/ \hbox{TaSiO}_{y}$ Solid Electrolyte

(2010) Munehiro Tada et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film

(2009) Sang-Jun Choi et al.   IEEE ELECTRON DEVICE LETTERS

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

(2009) Jaesik Yoon et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

(2009) Yingtao Li et al.   IEEE ELECTRON DEVICE LETTERS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

(2008) Naoki Banno et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Controlled local filament growth and dissolution in Ag–Ge–Se

(2008) Christina Schindler et al.   Physica Status Solidi-Rapid Research Letters