Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM
出版年份 2020 全文链接
标题
Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM
作者
关键词
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出版物
Electronics
Volume 9, Issue 7, Pages 1106
出版商
MDPI AG
发表日期
2020-07-07
DOI
10.3390/electronics9071106
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