Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlOx/TaOx/TiN structure

Published 2015 View Full Article

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Title
Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlOx/TaOx/TiN structure
Authors
Keywords
Resistive switching, Cu–Al, TaO, , CBRAM, Memory
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 637, Issue -, Pages 517-523
Publisher
Elsevier BV
Online
2015-03-13
DOI
10.1016/j.jallcom.2015.02.168

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