HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing
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Title
HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing
Authors
Keywords
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Journal
AIP Advances
Volume 10, Issue 3, Pages 035202
Publisher
AIP Publishing
Online
2020-03-02
DOI
10.1063/1.5143939
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