HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing

Single layer MoS2 nanoribbon field effect transistor

(2019) D. Kotekar-Patil et al.   APPLIED PHYSICS LETTERS

Short channel monolayer MoS2 field-effect transistors defined by SiOx nanofins down to 20 nm

(2019) kaixi Bi et al.   NANOTECHNOLOGY

MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit

(2018) Xingqiang Liu et al.   ADVANCED MATERIALS

Ferroelectric HfZrOx-based MoS2 negative capacitance transistor with ITO capping layers for steep-slope device application

(2018) Jing Xu et al.   APPLIED PHYSICS LETTERS

2D negative capacitance field-effect transistor with organic ferroelectrics

(2018) Heng Zhang et al.   NANOTECHNOLOGY

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2

(2018) Xiao Zou et al.   NANOTECHNOLOGY

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

(2017) Felicia A. McGuire et al.   NANO LETTERS

Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack

(2017) Amirhasan Nourbakhsh et al.   Nanoscale

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

(2017) Wei Zhang et al.   Nanoscale Research Letters

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

(2017) Wei Zhang et al.   Nanoscale Research Letters

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

(2016) Felicia A. McGuire et al.   APPLIED PHYSICS LETTERS

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

(2016) Jaesung Jo et al.   IEEE ELECTRON DEVICE LETTERS

High performance MoS2-based field-effect transistor enabled by hydrazine doping

(2016) Dongsuk Lim et al.   NANOTECHNOLOGY

Symmetric complementary logic inverter using integrated black phosphorus and MoS2transistors

(2016) Yang Su et al.   2D Materials

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

(2016) Jae Hyo Park et al.   Scientific Reports

Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides

(2015) Filip A. Rasmussen et al.   Journal of Physical Chemistry C

Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices

(2015) Jaesung Jo et al.   NANO LETTERS

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

(2015) Changjian Zhou et al.   Nanoscale

Nanomaterials in transistors: From high-performance to thin-film applications

(2015) A. D. Franklin   SCIENCE

Field-Effect Transistors Based on Few-Layered α-MoTe2

(2014) Nihar R. Pradhan et al.   ACS Nano

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

(2014) Zhihao Yu et al.   Nature Communications

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

(2013) Wei Wu et al.   APPLIED PHYSICS LETTERS

Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2

(2013) Lang Zeng et al.   APPLIED PHYSICS LETTERS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

(2012) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

(2011) Asif Islam Khan et al.   APPLIED PHYSICS LETTERS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

2D materials: to graphene and beyond

(2010) Rubén Mas-Ballesté et al.   Nanoscale

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor

(2010) Thomas N. Theis et al.   PROCEEDINGS OF THE IEEE

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS