Compliance current and temperature effects on non-volatile memory switching and volatile switching dynamics in a Cu/SiOx/p++-Si device

Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device

(2019) Andrey Sergeevich Sokolov et al.   NPG Asia Materials

Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices

(2019) Zhen Fei Zhang et al.   APPLIED PHYSICS LETTERS

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices

(2018) Alessandro Bricalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

(2018) Alessandro Bricalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability

(2017) Tae Hyung Park et al.   Nanoscale

Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5 -Based Memristors

(2017) Chia-Fu Chang et al.   Small

Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

(2017) Sungjun Kim et al.   RSC Advances

A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems

(2016) Cheng-Chih Hsieh et al.   APPLIED PHYSICS LETTERS

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

(2016) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

(2016) Yi-Jen Huang et al.   Scientific Reports

Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays

(2016) Rakesh Aluguri et al.   IEEE Journal of the Electron Devices Society

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

(2015) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Optical and Structural Properties of Si Nanocrystals in SiO2 Films

(2015) Timur Nikitin et al.   Nanomaterials

Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices

(2015) Xing Wu et al.   Advanced Electronic Materials

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

(2013) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2

(2013) Wun-Cheng Luo et al.   SOLID-STATE ELECTRONICS

Study of polarity effect in SiOx-based resistive switching memory

(2012) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

(2012) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in silicon suboxide films

(2012) Adnan Mehonic et al.   JOURNAL OF APPLIED PHYSICS

Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

(2011) Nagarajan Raghavan et al.   MICROELECTRONIC ENGINEERING

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film

(2009) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS