Oxygen vacancy effects on an amorphous-TaOx-based resistance switch: a first principles study

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Conduction paths in Cu/amorphous-Ta2O5/Pt atomic switch: First-principles studies

(2014) Bo Xiao et al.   JOURNAL OF APPLIED PHYSICS

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Electrical conductivity in oxygen-deficient phases of tantalum pentoxide from first-principles calculations

(2013) Robert J. Bondi et al.   JOURNAL OF APPLIED PHYSICS

Random telegraph noise and resistance switching analysis of oxide based resistive memory

(2013) Shinhyun Choi et al.   Nanoscale

Electronic structures of oxygen-deficient Ta2O5

(2013) Yong Yang et al.   AIP Advances

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

(2012) Feng Miao et al.   ACS Nano

Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

(2012) I. Goldfarb et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides

(2012) Blanka Magyari-Köpe et al.   JOURNAL OF MATERIALS SCIENCE

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Metal/TiO2 interfaces for memristive switches

(2011) J. Joshua Yang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Spectromicroscopy of tantalum oxide memristors

(2011) John Paul Strachan et al.   APPLIED PHYSICS LETTERS

Structure of Amorphous Tantalum Oxide and Titania-Doped Tantala:17O NMR Results for Sol–Gel and Ion-Beam-Sputtered Materials

(2011) Namjun Kim et al.   CHEMISTRY OF MATERIALS

Electronic structure of δ-Ta2O5 with oxygen vacancy: ab initio calculations and comparison with experiment

(2011) Maxim V. Ivanov et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

X-Ray absorption, photoemission spectroscopy, and Raman scattering analysis of amorphous tantalum oxide with a large extent of oxygen nonstoichiometry

(2011) Takashi Tsuchiya et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Conductive Path Formation in the Ta2O5 Atomic Switch: First-Principles Analyses

(2010) Tingkun Gu et al.   ACS Nano

Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells

(2010) Chang-Po Hsiung et al.   ACS Nano

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Dopant Control by Atomic Layer Deposition in Oxide Films for Memristive Switches

(2010) J. Joshua Yang et al.   CHEMISTRY OF MATERIALS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Modeling for bipolar resistive memory switching in transition-metal oxides

(2010) Ji Hyun Hur et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

First-principles simulations on bulk Ta2O5 and Cu/Ta2O5/Pt heterojunction: Electronic structures and transport properties

(2009) Tingkun Gu et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology