Role of Oxygen Vacancies at the TiO 2 /HfO 2 Interface in Flexible Oxide‐Based Resistive Switching Memory
出版年份 2019 全文链接
标题
Role of Oxygen Vacancies at the TiO
2
/HfO
2
Interface in Flexible Oxide‐Based Resistive Switching Memory
作者
关键词
-
出版物
Advanced Electronic Materials
Volume 5, Issue 5, Pages 1800833
出版商
Wiley
发表日期
2019-04-03
DOI
10.1002/aelm.201800833
参考文献
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