Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO2 Layer

Published 2014 View Full Article

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Title
Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO2 Layer
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 12, Pages 1233-1235
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-10-25
DOI
10.1109/led.2014.2363491

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