Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory
Published 2011 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory
Authors
Keywords
-
Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 21, Issue 9, Pages 1587-1592
Publisher
Wiley
Online
2011-03-11
DOI
10.1002/adfm.201002282
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films
- (2010) Kentaro Kinoshtia et al. APPLIED PHYSICS LETTERS
- Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory
- (2010) Gun Hwan Kim et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
- (2009) Kyung Min Kim et al. APPLIED PHYSICS LETTERS
- Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films
- (2009) Kyung Min Kim et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory
- (2009) Myoung-Jae Lee et al. NANO LETTERS
- The mechanism of electroforming of metal oxide memristive switches
- (2009) J Joshua Yang et al. NANOTECHNOLOGY
- Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory
- (2008) Myoung-Jae Lee et al. ADVANCED FUNCTIONAL MATERIALS
- Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors
- (2008) S. H. Chang et al. APPLIED PHYSICS LETTERS
- Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures
- (2008) Chanwoo Park et al. APPLIED PHYSICS LETTERS
- Direct observation of oxygen movement during resistance switching in NiO/Pt film
- (2008) Chikako Yoshida et al. APPLIED PHYSICS LETTERS
- Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
- (2008) Doo Seok Jeong et al. JOURNAL OF APPLIED PHYSICS
- Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory
- (2008) M. J. Lee et al. JOURNAL OF APPLIED PHYSICS
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
- MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?
- (2008) G. I. Meijer SCIENCE
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started