Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure

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Title
Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure
Authors
Keywords
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Journal
ACS Applied Materials & Interfaces
Volume 10, Issue 2, Pages 1828-1835
Publisher
American Chemical Society (ACS)
Online
2017-12-20
DOI
10.1021/acsami.7b16214

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