The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide

Power saving through state retention in IGZO-TFT AMOLED displays for wearable applications

(2017) Soeren Steudel et al.   Journal of the Society for Information Display

Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2Treated Al2O3Tunneling Layer: A Cost-Effective Method

(2016) Jayapal Raja et al.   IEEE ELECTRON DEVICE LETTERS

Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditions

(2016) Nidhi Tiwari et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

(2014) Jun Yong Bak et al.   IEEE ELECTRON DEVICE LETTERS

A Review on Conduction Mechanisms in Dielectric Films

(2014) Fu-Chien Chiu   Advances in Materials Science and Engineering

Multilevel resistive switching memory with amorphous InGaZnO-based thin film

(2013) Ching-Hui Hsu et al.   APPLIED PHYSICS LETTERS

Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors

(2013) Kyungsoo Jang et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer

(2013) Shigekazu Tomai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Investigation of charge storage and retention characteristics of silicon nitride in NVM based on InGaZnO channels for system-on-panel applications

(2012) Hong Hanh Nguyen et al.   MICROELECTRONIC ENGINEERING

Past achievements and future challenges in the development of optically transparent electrodes

(2012) Klaus Ellmer   Nature Photonics

Direct Observation of Hole Current in Amorphous Oxide Semiconductors under Illumination

(2011) Yoon Jang Chung et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Fabrication of SiO2/SiOx/SiOxNy Non-Volatile Memory with Transparent Amorphous Indium Gallium Zinc Oxide Channels

(2011) Hong Hanh Nguyen et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

(2010) Nai-Chao Su et al.   IEEE ELECTRON DEVICE LETTERS

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

(2010) Kwang Hwan Ji et al.   IEEE ELECTRON DEVICE LETTERS

High performance nonvolatile memory using SiO2/SiOx/SiOxNystack on excimer laser-annealed polysilicon and the effect of blocking thickness on operation voltage

(2010) Nguyen Van Duy et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

(2008) Hsing-Hung Hsieh et al.   APPLIED PHYSICS LETTERS

Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

(2008) Huaxiang Yin et al.   APPLIED PHYSICS LETTERS

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

(2008) Huaxiang Yin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Memory properties of oxide–nitride–oxynitride stack structure using ultra-thin oxynitrided film as tunneling layer for nonvolatile memory device on glass

(2008) Sungwook Jung et al.   THIN SOLID FILMS