A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

Published 2010 View Full Article

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Title
A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 3, Pages 201-203
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-01-20
DOI
10.1109/led.2009.2037986
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