Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

Title
Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 17, Pages 172109
Publisher
AIP Publishing
Online
2008-10-31
DOI
10.1063/1.3012386

Ask authors/readers for more resources

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started