Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

(2018) Antonio Di Bartolomeo et al.   ADVANCED FUNCTIONAL MATERIALS

High-Performance WSe2 Phototransistors with 2D/2D Ohmic Contacts

(2018) Tianjiao Wang et al.   NANO LETTERS

Transport and Field Emission Properties of MoS2 Bilayers

(2018) Francesca Urban et al.   Nanomaterials

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

(2018) Amritesh Rai et al.   Crystals

Electrical transport and persistent photoconductivity in monolayer MoS2phototransistors

(2017) Antonio Di Bartolomeo et al.   NANOTECHNOLOGY

Total absorption of light in monolayer transition-metal dichalcogenides by critical coupling

(2017) Hongju Li et al.   OPTICS EXPRESS

The role of contact resistance in graphene field-effect devices

(2017) Filippo Giubileo et al.   PROGRESS IN SURFACE SCIENCE

Electron beam induced removal of PMMA layer used for graphene transfer

(2017) B. H. Son et al.   Scientific Reports

Leakage and field emission in side-gate graphene field effect transistors

(2016) A. Di Bartolomeo et al.   APPLIED PHYSICS LETTERS

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Investigations of vapour-phase deposited transition metal dichalcogenide films for future electronic applications

(2016) Riley Gatensby et al.   SOLID-STATE ELECTRONICS

Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects

(2016) Maria O’Brien et al.   Scientific Reports

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

(2015) Hema C. P. Movva et al.   ACS Nano

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

(2015) Bilu Liu et al.   ACS Nano

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

(2015) Junjie Wang et al.   APPLIED PHYSICS LETTERS

Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

(2015) Yao Guo et al.   APPLIED PHYSICS LETTERS

Optimized graphene transfer: Influence of polymethylmethacrylate (PMMA) layer concentration and baking time on graphene final performance

(2015) Gabriela Borin Barin et al.   CARBON

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

(2015) Hennrik Schmidt et al.   CHEMICAL SOCIETY REVIEWS

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

(2015) Amritesh Rai et al.   NANO LETTERS

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

(2015) Lili Yu et al.   NANO LETTERS

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

(2015) Antonio Di Bartolomeo et al.   NANOTECHNOLOGY

Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors

(2015) N. R. Pradhan et al.   Scientific Reports

High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

(2014) Mahmut Tosun et al.   ACS Nano

Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers

(2014) Wenjing Zhang et al.   ACS Nano

Electrical Transport Properties of Single-Layer WS2

(2014) Dmitry Ovchinnikov et al.   ACS Nano

Study on the Resistance Distribution at the Contact between Molybdenum Disulfide and Metals

(2014) Yao Guo et al.   ACS Nano

Air Stable p-Doping of WSe2 by Covalent Functionalization

(2014) Peida Zhao et al.   ACS Nano

Electron and Hole Mobilities in Single-Layer WSe2

(2014) Adrien Allain et al.   ACS Nano

High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors

(2014) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

(2014) Hsun-Jen Chuang et al.   NANO LETTERS

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

(2014) Britton W. H. Baugher et al.   Nature Nanotechnology

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

(2014) Jason S. Ross et al.   Nature Nanotechnology

Solar-energy conversion and light emission in an atomic monolayer p–n diode

(2014) Andreas Pospischil et al.   Nature Nanotechnology

Transition Metal Dichalcogenide Growth via Close Proximity Precursor Supply

(2014) Maria O'Brien et al.   Scientific Reports

WSe2 field effect transistors with enhanced ambipolar characteristics

(2013) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

(2013) Jiadan Lin et al.   APPLIED PHYSICS LETTERS

Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

(2013) Deep Jariwala et al.   APPLIED PHYSICS LETTERS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping

(2013) Shinichiro Mouri et al.   NANO LETTERS

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

(2013) Hui Fang et al.   NANO LETTERS

Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

(2013) Weijie Zhao et al.   Nanoscale

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

(2012) Sefaattin Tongay et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

(2011) A. Pirkle et al.   APPLIED PHYSICS LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell

(2010) A. Di Bartolomeo et al.   Nanoscale Research Letters

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Enhanced field emission stability and density produced by conical bundles of catalyst-free carbon nanotubes

(2009) Archana Pandey et al.   CARBON

Charged-impurity scattering in graphene

(2008) J.-H. Chen et al.   Nature Physics