Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
Published 2018 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Asymmetric Schottky Contacts in Bilayer MoS2
Field Effect Transistors
Authors
Keywords
-
Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 28, Issue 28, Pages 1800657
Publisher
Wiley
Online
2018-05-22
DOI
10.1002/adfm.201800657
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Highly sensitive MoS2 photodetectors with graphene contacts
- (2018) Peize Han et al. NANOTECHNOLOGY
- Supercapacitors Based on High Surface Area MoS2 and MoS2–Fe3O4 Nanostructures Supported on Physical Exfoliated Graphite
- (2017) M Sarno et al. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
- (2017) Junyoung Kwon et al. Nanoscale
- Focus on graphene and related materials
- (2017) Filippo Giubileo et al. NANOTECHNOLOGY
- Visible to near-infrared photodetectors based on MoS2 vertical Schottky junctions
- (2017) Fan Gong et al. NANOTECHNOLOGY
- Electrical transport and persistent photoconductivity in monolayer MoS2phototransistors
- (2017) Antonio Di Bartolomeo et al. NANOTECHNOLOGY
- The role of contact resistance in graphene field-effect devices
- (2017) Filippo Giubileo et al. PROGRESS IN SURFACE SCIENCE
- MoS2-DNA and MoS2 based sensors
- (2017) Lirong Yan et al. RSC Advances
- Ambient effects on electrical characteristics of CVD-grown monolayer MoS2 field-effect transistors
- (2017) Jae-Hyuk Ahn et al. Scientific Reports
- 2D transition metal dichalcogenides
- (2017) Sajedeh Manzeli et al. Nature Reviews Materials
- MoS2–Titanium Contact Interface Reactions
- (2016) Stephen McDonnell et al. ACS Applied Materials & Interfaces
- Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts
- (2016) Tae-Young Kim et al. ACS Nano
- High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
- (2016) Jingli Wang et al. ADVANCED MATERIALS
- Chemisorption-induced n-doping of MoS2 by oxygen
- (2016) Long Qi et al. APPLIED PHYSICS LETTERS
- Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer
- (2016) Peng-Zhi Shao et al. APPLIED PHYSICS LETTERS
- Leakage and field emission in side-gate graphene field effect transistors
- (2016) A. Di Bartolomeo et al. APPLIED PHYSICS LETTERS
- Large variability of contact resistance in Au/Cr/MoS2system and its suppression by Cr thinning
- (2016) Kosuke Sano et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure
- (2016) Min-Kyu Joo et al. NANO LETTERS
- Trap-induced photoresponse of solution-synthesized MoS2
- (2016) Youngbin Lee et al. Nanoscale
- The intrinsic origin of hysteresis in MoS2field effect transistors
- (2016) Jiapei Shu et al. Nanoscale
- Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction
- (2016) Antonio Di Bartolomeo PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
- MoS2 transistors with 1-nanometer gate lengths
- (2016) S. B. Desai et al. SCIENCE
- Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
- (2016) Antonio Di Bartolomeo et al. 2D Materials
- Symmetric complementary logic inverter using integrated black phosphorus and MoS2transistors
- (2016) Yang Su et al. 2D Materials
- Defect engineering of two-dimensional transition metal dichalcogenides
- (2016) Zhong Lin et al. 2D Materials
- Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
- (2016) Hongxia Zhong et al. Scientific Reports
- Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices
- (2015) R. Samnakay et al. APPLIED PHYSICS LETTERS
- Electrically Tunable Bandgaps in Bilayer MoS2
- (2015) Tao Chu et al. NANO LETTERS
- Investigation of Band-Offsets at Monolayer–Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy
- (2015) Sarah L. Howell et al. NANO LETTERS
- Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed
- (2015) Dominik Kufer et al. NANO LETTERS
- Thickness-dependent mobility in two-dimensional MoS2transistors
- (2015) Dominik Lembke et al. Nanoscale
- Controlling the Schottky barrier atMoS2/metal contacts by inserting a BN monolayer
- (2015) Mojtaba Farmanbar et al. PHYSICAL REVIEW B
- Coherent Generation of Photo-Thermo-Acoustic Wave from Graphene Sheets
- (2015) Yichao Tian et al. Scientific Reports
- Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors
- (2015) Yueh-Chun Wu et al. Scientific Reports
- Advances in MoS2-Based Field Effect Transistors (FETs)
- (2015) Xin Tong et al. Nano-Micro Letters
- Advances in MoS2-Based Field Effect Transistors (FETs)
- (2015) Xin Tong et al. Nano-Micro Letters
- Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors
- (2015) Nan Ma et al. 2D Materials
- Defect-Dominated Doping and Contact Resistance in MoS2
- (2014) Stephen McDonnell et al. ACS Nano
- Monolayer MoS2 Heterojunction Solar Cells
- (2014) Meng-Lin Tsai et al. ACS Nano
- Electrical Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide
- (2014) Sina Najmaei et al. ACS Nano
- Low-Frequency Noise in Bilayer MoS2 Transistor
- (2014) Xuejun Xie et al. ACS Nano
- High-Performance Chemical Sensing Using Schottky-Contacted Chemical Vapor Deposition Grown Monolayer MoS2 Transistors
- (2014) Bilu Liu et al. ACS Nano
- Origin of the high work function and high conductivity of MoO3
- (2014) Yuzheng Guo et al. APPLIED PHYSICS LETTERS
- Schottky barrier heights for Au and Pd contacts to MoS2
- (2014) Naveen Kaushik et al. APPLIED PHYSICS LETTERS
- Mechanisms of Photoconductivity in Atomically Thin MoS2
- (2014) Marco M. Furchi et al. NANO LETTERS
- Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors
- (2014) Kyungjune Cho et al. NANOTECHNOLOGY
- High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
- (2013) Wei Wu et al. APPLIED PHYSICS LETTERS
- Work function modulation of bilayer MoS2 nanoflake by backgate electric field effect
- (2013) Yang Li et al. APPLIED PHYSICS LETTERS
- Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor
- (2013) Subhamoy Ghatak et al. APPLIED PHYSICS LETTERS
- Graphene applications in electronic and optoelectronic devices and circuits
- (2013) Hua-Qiang Wu et al. Chinese Physics B
- Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts
- (2013) Jen-Ru Chen et al. NANO LETTERS
- Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors
- (2013) Woanseo Park et al. NANOTECHNOLOGY
- Ultrasensitive photodetectors based on monolayer MoS2
- (2013) Oriol Lopez-Sanchez et al. Nature Nanotechnology
- Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
- (2013) Marcio Fontana et al. Scientific Reports
- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- From Bulk to Monolayer MoS2: Evolution of Raman Scattering
- (2012) Hong Li et al. ADVANCED FUNCTIONAL MATERIALS
- Mobility enhancement and highly efficient gating of monolayer MoS2transistors with polymer electrolyte
- (2012) Ming-Wei Lin et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Graphene: synthesis and applications
- (2012) Phaedon Avouris et al. Materials Today
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
- (2012) Hee Sung Lee et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- (2011) Subhamoy Ghatak et al. ACS Nano
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2
- (2011) Branimir Radisavljevic et al. ACS Nano
- The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory
- (2011) Jason K. Ellis et al. APPLIED PHYSICS LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Characterizing TiO2(110) surface states by their work function
- (2011) Andriy Borodin et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
- (2010) Changgu Lee et al. ACS Nano
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started