Oxidant Concentration Modulated Metal/Silicon Interface Electrical Field Mediates Metal‐Assisted Chemical Etching of Silicon

Title
Oxidant Concentration Modulated Metal/Silicon Interface Electrical Field Mediates Metal‐Assisted Chemical Etching of Silicon
Authors
Keywords
-
Journal
Advanced Materials Interfaces
Volume 5, Issue 23, Pages 1801132
Publisher
Wiley
Online
2018-10-17
DOI
10.1002/admi.201801132

Ask authors/readers for more resources

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now