Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process
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Title
Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process
Authors
Keywords
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Journal
Scientific Reports
Volume 7, Issue 1, Pages -
Publisher
Springer Nature
Online
2017-11-20
DOI
10.1038/s41598-017-16585-x
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- (2016) Ravindra Naik Bukke et al. IEEE ELECTRON DEVICE LETTERS
- Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation
- (2016) Chaiyanan Kulchaisit et al. Journal of Display Technology
- Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation
- (2016) U H Choi et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Homojunction Solution-Processed Metal Oxide Thin-Film Transistors Using Passivation-Induced Channel Definition
- (2014) Jung Hyun Kim et al. ACS Applied Materials & Interfaces
- Simple Method to Enhance Positive Bias Stress Stability of In–Ga–Zn–O Thin-Film Transistors Using a Vertically Graded Oxygen-Vacancy Active Layer
- (2014) Ji Hoon Park et al. ACS Applied Materials & Interfaces
- Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation
- (2014) Sungjin An et al. APPLIED PHYSICS LETTERS
- Improvements in passivation effect of amorphous InGaZnO thin film transistors
- (2014) Chengyuan Dong et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric
- (2013) Pradipta K. Nayak et al. APPLIED PHYSICS LETTERS
- Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process
- (2012) Jun Young Choi et al. APPLIED PHYSICS LETTERS
- Solution-Processed Zinc Oxide Thin-Film Transistors With a Low-Temperature Polymer Passivation Layer
- (2012) Xiaoli Xu et al. IEEE ELECTRON DEVICE LETTERS
- Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors
- (2012) Christophe Avis et al. JOURNAL OF MATERIALS CHEMISTRY
- Effects of Sol-Gel Organic-Inorganic Hybrid Passivation on Stability of Solution-Processed Zinc Tin Oxide Thin Film Transistors
- (2011) Seok-Jun Seo et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Fast and Stable Solution-Processed Transparent Oxide Thin-Film Transistor Circuits
- (2011) Kwang Ho Kim et al. IEEE ELECTRON DEVICE LETTERS
- Influence of hydrogen annealing on the properties of hafnium oxide thin films
- (2011) M.F. Al-Kuhaili et al. MATERIALS CHEMISTRY AND PHYSICS
- Influence of a highly doped buried layer for HfInZnO thin-film transistors
- (2011) Eugene Chong et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors
- (2011) Dae-Ho Son et al. THIN SOLID FILMS
- Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layers
- (2011) Kenji Nomura et al. THIN SOLID FILMS
- Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors
- (2010) Yuri Choi et al. APPLIED PHYSICS LETTERS
- Investigating addition effect of hafnium in InZnO thin film transistors using a solution process
- (2010) Woong Hee Jeong et al. APPLIED PHYSICS LETTERS
- High stability of amorphous hafnium-indium-zinc-oxide thin film transistor
- (2010) Eugene Chong et al. APPLIED PHYSICS LETTERS
- Solvent-free solution processed passivation layer for improved long-term stability of organic field-effect transistors
- (2010) Sooji Nam et al. JOURNAL OF MATERIALS CHEMISTRY
- Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
- (2009) Chang-Jung Kim et al. APPLIED PHYSICS LETTERS
- High Performance Solution-Processed and Lithographically Patterned Zinc–Tin Oxide Thin-Film Transistors with Good Operational Stability
- (2009) Sung Kyu Park et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator
- (2009) Chia-Yu Wei et al. IEEE ELECTRON DEVICE LETTERS
- Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
- (2008) Jae Kyeong Jeong et al. APPLIED PHYSICS LETTERS
- Amorphous oxide channel TFTs
- (2007) Hideya Kumomi et al. THIN SOLID FILMS
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