Simple Method to Enhance Positive Bias Stress Stability of In–Ga–Zn–O Thin-Film Transistors Using a Vertically Graded Oxygen-Vacancy Active Layer

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Title
Simple Method to Enhance Positive Bias Stress Stability of In–Ga–Zn–O Thin-Film Transistors Using a Vertically Graded Oxygen-Vacancy Active Layer
Authors
Keywords
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Journal
ACS Applied Materials & Interfaces
Volume 6, Issue 23, Pages 21363-21368
Publisher
American Chemical Society (ACS)
Online
2014-11-18
DOI
10.1021/am5063212

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