Influence of a highly doped buried layer for HfInZnO thin-film transistors

Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

(2011) Thanh Thuy Trinh et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering

(2011) Eugene Chong et al.   THIN SOLID FILMS

Localization effect of a current-path in amorphous In–Ga–Zn–O thin film transistors with a highly doped buried-layer

(2011) Eugene Chong et al.   THIN SOLID FILMS

Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits

(2010) Heiko Frenzel et al.   ADVANCED MATERIALS

High stability of amorphous hafnium-indium-zinc-oxide thin film transistor

(2010) Eugene Chong et al.   APPLIED PHYSICS LETTERS

Effect of Trap Density on the Stability of SiInZnO Thin-Film Transistor under Temperature and Bias-Induced Stress

(2010) Eugene Chong et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature

(2010) Joo Hyon Noh et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

(2010) Jae Sang Lee et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Solution-Processed Amorphous Zinc−Indium−Tin Oxide Thin-Film Transistors

(2010) Myung-Gil Kim et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories

(2009) Hee-Dong Kim et al.   MICROELECTRONICS RELIABILITY