Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process

Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

(2010) Woong Hee Jeong et al.   APPLIED PHYSICS LETTERS

Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

(2009) Sunho Jeong et al.   ADVANCED MATERIALS

Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-κ CeZrO4Ternary Oxide as Gate Dielectric

(2009) Pi-chun Juan et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology

Inkjet-Printed Zinc Tin Oxide Thin-Film Transistor

(2009) Dongjo Kim et al.   LANGMUIR

Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

(2009) Bhola N. Pal et al.   NATURE MATERIALS

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

(2008) Hsing-Hung Hsieh et al.   APPLIED PHYSICS LETTERS

High mobility indium free amorphous oxide thin film transistors

(2008) Elvira M. C. Fortunato et al.   APPLIED PHYSICS LETTERS

Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor

(2008) Gun Hee Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY