Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation

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Title
Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation
Authors
Keywords
-
Journal
Journal of Display Technology
Volume 12, Issue 3, Pages 263-267
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-09-10
DOI
10.1109/jdt.2015.2475127

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