Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte

Two-Step Forming Process in Planar-Type Cu2O-Based Resistive Switching Devices

(2011) Kazunori Suzuki et al.   Applied Physics Express

A HfO2 Thin Film Resistive Switch Based on Conducting Atomic Force Microscopy

(2011) J. Y. Son et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-$\kappa$ Al$_{2}$O$_{3}$/WO$_{x}$ Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications

(2011) Writam Banerjee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells

(2010) Chang-Po Hsiung et al.   ACS Nano

Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor

(2010) Zhi Xu et al.   ACS Nano

Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

(2010) S. Z. Rahaman et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs

(2010) Erh-Kun Lai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing

(2010) Pang-Shiu Chen et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films

(2010) D. Panda et al.   JOURNAL OF APPLIED PHYSICS

Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte

(2010) S.Z. Rahaman et al.   MICROELECTRONICS RELIABILITY

Resistive Switches and Memories from Silicon Oxide

(2010) Jun Yao et al.   NANO LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion

(2009) Masamitsu Haemori et al.   Applied Physics Express

Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory

(2009) D. Kamalanathan et al.   IEEE ELECTRON DEVICE LETTERS

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

(2008) Naoki Banno et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices

(2008) Kohei Fujiwara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology