Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

(2013) Amit Prakash et al.   Nanoscale Research Letters

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

(2013) Amit Prakash et al.   Nanoscale Research Letters

TaOx-based resistive switching memories: prospective and challenges

(2013) Amit Prakash et al.   Nanoscale Research Letters

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

(2012) Sheikh Rahaman et al.   Nanoscale Research Letters

Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte

(2012) Sheikh Rahaman et al.   Nanoscale Research Letters

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

(2012) Writam Banerjee et al.   Nanoscale Research Letters

Improvement of resistive switching characteristics in ZrO2film by embedding a thin TiOxlayer

(2011) Yingtao Li et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

(2011) Xianwen Sun et al.   Nanoscale Research Letters

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Self-Aligned Memristor Cross-Point Arrays Fabricated with One Nanoimprint Lithography Step

(2010) Qiangfei Xia et al.   NANO LETTERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Study on Resistance Switching Properties of Na0.5Bi0.5TiO3 Thin Films Using Impedance Spectroscopy

(2009) Ting Zhang et al.   Nanoscale Research Letters

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology