Defect identification in semiconductors with positron annihilation: Experiment and theory

Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

(2013) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure investigation of energetics and positron lifetimes of fully relaxed monovacancies with various charge states in 3C-SiC and 6H-SiC

(2013) Julia Wiktor et al.   PHYSICAL REVIEW B

Low energy electron beam induced vacancy activation in GaN

(2012) H. Nykänen et al.   APPLIED PHYSICS LETTERS

Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application

(2012) Woo-Shik Jung et al.   APPLIED PHYSICS LETTERS

Vacancy-type defects in InxGa1–xN alloys probed using a monoenergetic positron beam

(2012) A. Uedono et al.   JOURNAL OF APPLIED PHYSICS

Positron annihilation studies of fluorine-vacancy complexes in Si and SiGe

(2012) C. J. Edwardson et al.   JOURNAL OF APPLIED PHYSICS

Positron Annihilation Lifetime Studies of Nb-Doped TiO2, SnO2, and ZrO2

(2012) Paul R. Guagliardo et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Tailoring the Chain Packing in Ultrathin Polyelectrolyte Films Formed by Sequential Adsorption: Nanoscale Probing by Positron Annihilation Spectroscopy

(2012) John F. Quinn et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Scanning transmission electron microscopy: Seeing the atoms more clearly

(2012) Stephen J. Pennycook   MRS BULLETIN

Positron lifetime spectroscopy with optical excitation: a case study of natural diamond

(2012) J-M Mäki et al.   NEW JOURNAL OF PHYSICS

Matter-positronium interaction: A study of the He-atom–positronium system

(2012) A. Zubiaga et al.   PHYSICAL REVIEW A

General properties of electron-positron momentum densities

(2012) G. Kontrym-Sznajd et al.   PHYSICAL REVIEW B

Charge transfer and structure of K/Si(111)-23×23-B surface studied by reflection high-energy positron diffraction

(2012) Y. Fukaya et al.   PHYSICAL REVIEW B

Vacancy defects in epitaxial thin filmCuGaSe2andCuInSe2

(2012) E. Korhonen et al.   PHYSICAL REVIEW B

Doppler broadening of annihilation radiation measurements on3dand4fferromagnets using polarized positrons

(2012) A. Kawasuso et al.   PHYSICAL REVIEW B

Size estimation of embedded Cu nanoprecipitates in Fe by using affinitively trapped positrons

(2012) T. Toyama et al.   PHYSICAL REVIEW B

Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

(2012) K. E. Knutsen et al.   PHYSICAL REVIEW B

Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin

(2012) Elif Ertekin et al.   PHYSICAL REVIEW LETTERS

First-Principles Optical Spectra forFCenters in MgO

(2012) Patrick Rinke et al.   PHYSICAL REVIEW LETTERS

Room-Temperature Quantum Bit Memory Exceeding One Second

(2012) P. C. Maurer et al.   SCIENCE

Impact of Cu/III ratio on the near-surface defects in polycrystalline CuGaSe2 thin films

(2011) M. M. Islam et al.   APPLIED PHYSICS LETTERS

Collateral evidence for an excellent radiative performance of AlxGa1−xN alloy films of high AlN mole fractions

(2011) S. F. Chichibu et al.   APPLIED PHYSICS LETTERS

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

(2011) Poul Georg Moses et al.   JOURNAL OF CHEMICAL PHYSICS

High-dynamic-range magnetometry with a single nuclear spin in diamond

(2011) G. Waldherr et al.   Nature Nanotechnology

Hybrid functional calculations of native point defects in InN

(2011) A. Janotti et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Precision measurement of the decay rate of the negative positronium ion Ps−

(2011) Hubert Ceeh et al.   PHYSICAL REVIEW A

Optimal conditions forNV−center formation in type-1b diamond studied using photoluminescence and positron annihilation spectroscopies

(2011) J. Botsoa et al.   PHYSICAL REVIEW B

Defect evolution and impurity migration in Na-implanted ZnO

(2011) Pekka T. Neuvonen et al.   PHYSICAL REVIEW B

Identification of defect properties by positron annihilation in Te-doped GaAs after Cu in-diffusion

(2011) M. Elsayed et al.   PHYSICAL REVIEW B

Vacancy defects in CdTe thin films

(2011) D. J. Keeble et al.   PHYSICAL REVIEW B

Identification of substitutional Li inn-type ZnO and its role as an acceptor

(2011) K. M. Johansen et al.   PHYSICAL REVIEW B

H passivation of Li on Zn-site in ZnO: Positron annihilation spectroscopy and secondary ion mass spectrometry

(2011) K. M. Johansen et al.   PHYSICAL REVIEW B

Spin-polarized positron annihilation measurements of polycrystalline Fe, Co, Ni, and Gd based on Doppler broadening of annihilation radiation

(2011) Atsuo Kawasuso et al.   PHYSICAL REVIEW B

Direct observations of the vacancy and its annealing in germanium

(2011) J. Slotte et al.   PHYSICAL REVIEW B

Identification of theVAl-ONdefect complex in AlN single crystals

(2011) J.-M. Mäki et al.   PHYSICAL REVIEW B

Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN

(2011) Christian Rauch et al.   PHYSICAL REVIEW B

Evolution ofE-centers during the annealing of Sb-doped Si0.8Ge0.2

(2011) S. Kilpeläinen et al.   PHYSICAL REVIEW B

Time Dependence of Charge Transfer Processes in Diamond Studied with Positrons

(2011) J.-M. Mäki et al.   PHYSICAL REVIEW LETTERS

Quantum Monte Carlo Study of a Positron in an Electron Gas

(2011) N. D. Drummond et al.   PHYSICAL REVIEW LETTERS

Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance

(2010) T. Umeda et al.   APPLIED PHYSICS LETTERS

AlGaN solar-blind avalanche photodiodes with high multiplication gain

(2010) Lu Sun et al.   APPLIED PHYSICS LETTERS

Dual nature of acceptors in GaN and ZnO: The curious case of the shallow MgGa deep state

(2010) Stephan Lany et al.   APPLIED PHYSICS LETTERS

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

(2010) R. Ferragut et al.   Nanoscale Research Letters

Controlling the conductivity of InN

(2010) C. G. Van de Walle et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN

(2010) O. Moutanabbir et al.   PHYSICAL REVIEW B

Ab initiocalculations of arsenic in silicon: Diffusion mechanism and strain dependence

(2010) Kilian Vollenweider et al.   PHYSICAL REVIEW B

Experimental determination of the state-dependent enhancement of the electron-positron momentum density in solids

(2010) J. Laverock et al.   PHYSICAL REVIEW B

Point defect distribution in high-mobility conductiveSrTiO3crystals

(2010) A. Gentils et al.   PHYSICAL REVIEW B

First-principles method for impurities in quantum fluids: Positron in an electron gas

(2010) N. D. Drummond et al.   PHYSICAL REVIEW B

Stabilization of Ge-rich defect complexes originating fromEcenters inSi1−xGex:P

(2010) S. Kilpeläinen et al.   PHYSICAL REVIEW B

Positrons as interface-sensitive probes of polar semiconductor heterostructures

(2010) I. Makkonen et al.   PHYSICAL REVIEW B

Auger-Mediated Sticking of Positrons to Surfaces: Evidence for a Single-Step Transition from a Scattering State to a Surface Image Potential Bound State

(2010) S. Mukherjee et al.   PHYSICAL REVIEW LETTERS

Interaction between Na and Li in ZnO

(2009) Pekka T. Neuvonen et al.   APPLIED PHYSICS LETTERS

ABINIT: First-principles approach to material and nanosystem properties

(2009) X. Gonze et al.   COMPUTER PHYSICS COMMUNICATIONS

Native vacancy defects in Zn1−x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy

(2009) L. Kilanski et al.   JOURNAL OF APPLIED PHYSICS

Point defects in group-III nitride semiconductors studied by positron annihilation

(2009) A. Uedono et al.   JOURNAL OF CRYSTAL GROWTH

Probing Biomembranes with Positrons

(2009) Petri Sane et al.   JOURNAL OF PHYSICAL CHEMISTRY B

Lattice relaxation at V−, NV−, and NVN−defects in diamond investigated by positron annihilation

(2009) S Dannefaer   JOURNAL OF PHYSICS-CONDENSED MATTER

Properties of optically active vacancy clusters in type IIa diamond

(2009) J-M Mäki et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Fermiology via the electron momentum distribution (Review Article)

(2009) G. Kontrym-Sznajd   LOW TEMPERATURE PHYSICS

Li-related defects in ZnO: Hybrid functional calculations

(2009) A. Carvalho et al.   PHYSICA B-CONDENSED MATTER

Vacancies and interstitials in indium nitride: Vacancy clustering and molecular bondlike formation from first principles

(2009) X. M. Duan et al.   PHYSICAL REVIEW B

Vacancy defect positron lifetimes in strontium titanate

(2009) R. A. Mackie et al.   PHYSICAL REVIEW B

Identification of the gallium vacancy–oxygen pair defect in GaN

(2009) N. T. Son et al.   PHYSICAL REVIEW B

Defect complexes and cluster doping of InN: First-principles investigations

(2009) X. M. Duan et al.   PHYSICAL REVIEW B

Ab InitioStudy of Fluorine in Silicon: Large Clusters and the Dominant Mobile Defect

(2009) Kilian Vollenweider et al.   PHYSICAL REVIEW LETTERS

FullyAb InitioFinite-Size Corrections for Charged-Defect Supercell Calculations

(2009) Christoph Freysoldt et al.   PHYSICAL REVIEW LETTERS

Fundamentals of zinc oxide as a semiconductor

(2009) Anderson Janotti et al.   REPORTS ON PROGRESS IN PHYSICS

Formation and evolution of F nanobubbles in amorphous and crystalline Si

(2008) S. Boninelli et al.   APPLIED PHYSICS LETTERS

High-resolution positron lifetime measurement using ultra fast digitizers Acqiris DC211

(2008) F. Bečvář et al.   APPLIED SURFACE SCIENCE

Vacancy generation during Cu diffusion in GaAs

(2008) M. Elsayed et al.   JOURNAL OF APPLIED PHYSICS

Positron Annihilation Lifetime Spectroscopy (PALS) as a Characterization Technique for Nanostructured Self-Assembled Amphiphile Systems

(2008) Aurelia W. Dong et al.   JOURNAL OF PHYSICAL CHEMISTRY B

Defects in electron irradiated boron-doped diamonds investigated by positron annihilation and optical absorption

(2008) S Dannefaer et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Vacancy clustering and acceptor activation in nitrogen-implanted ZnO

(2008) Thomas Moe Børseth et al.   PHYSICAL REVIEW B

Mechanisms of electrical isolation inO+-irradiated ZnO

(2008) A. Zubiaga et al.   PHYSICAL REVIEW B

Divacancy clustering in neutron-irradiated and annealedn-type germanium

(2008) K. Kuitunen et al.   PHYSICAL REVIEW B

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

(2008) J. Slotte et al.   PHYSICAL REVIEW B

Nitrogen vacancies in InN: Vacancy clustering and metallic bonding from first principles

(2008) X. M. Duan et al.   PHYSICAL REVIEW B

Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation

(2008) Z. Q. Chen et al.   PHYSICAL REVIEW B

Erratum: Physisorption of Positronium on Quartz Surfaces [Phys. Rev. Lett.99, 096101 (2007)]

(2008) R. Saniz et al.   PHYSICAL REVIEW LETTERS