Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application

Suppression of donor-vacancy clusters in germanium by concurrent annealing and irradiation

(2011) S. Schneider et al.   APPLIED PHYSICS LETTERS

Effect of Fluorine Co-Implant on Boron Diffusion in Germanium Preamorphized Silicon During Post-LSA Rapid Thermal Annealing

(2011) Chyiu Hyia Poon et al.   IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING

SRIM – The stopping and range of ions in matter (2010)

(2010) James F. Ziegler et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere

(2009) R. R. Lieten et al.   APPLIED PHYSICS LETTERS

Fluorine codoping in germanium to suppress donor diffusion and deactivation

(2009) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Vacancy-mediated dopant diffusion activation enthalpies for germanium

(2008) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes

(2008) A. Chroneos et al.   PHYSICAL REVIEW B