Point defects in group-III nitride semiconductors studied by positron annihilation

Published 2009 View Full Article

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Title
Point defects in group-III nitride semiconductors studied by positron annihilation
Authors
Keywords
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Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 10, Pages 3075-3079
Publisher
Elsevier BV
Online
2009-01-19
DOI
10.1016/j.jcrysgro.2009.01.051

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