Identification of defect properties by positron annihilation in Te-doped GaAs after Cu in-diffusion

Published 2011 View Full Article

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Title
Identification of defect properties by positron annihilation in Te-doped GaAs after Cu in-diffusion
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 84, Issue 19, Pages -
Publisher
American Physical Society (APS)
Online
2011-11-29
DOI
10.1103/physrevb.84.195208
References
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