Vacancy-type defects in InxGa1–xN alloys probed using a monoenergetic positron beam

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

(2012) Xinqiang Wang et al.   Applied Physics Express

Defect evolution and interplay in n-type InN

(2012) Christian Rauch et al.   APPLIED PHYSICS LETTERS

Defect characterization in Mg-doped GaN studied using a monoenergetic positron beam

(2012) A. Uedono et al.   JOURNAL OF APPLIED PHYSICS

GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

(2011) Yousuke Kuwahara et al.   Applied Physics Express

Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing

(2011) S. T. Liu et al.   JOURNAL OF APPLIED PHYSICS

Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN

(2011) Christian Rauch et al.   PHYSICAL REVIEW B

InGaN/GaN multiple quantum well concentrator solar cells

(2010) R. Dahal et al.   APPLIED PHYSICS LETTERS

Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy

(2010) Akihiko Yoshikawa et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Vacancy-type defects in Mg-doped InN probed by means of positron annihilation

(2009) A. Uedono et al.   JOURNAL OF APPLIED PHYSICS

Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation

(2009) A. Uedono et al.   JOURNAL OF APPLIED PHYSICS

First principles studies on In-related nitride semiconductors

(2009) Teruaki Obata et al.   JOURNAL OF CRYSTAL GROWTH

Point defects in group-III nitride semiconductors studied by positron annihilation

(2009) A. Uedono et al.   JOURNAL OF CRYSTAL GROWTH

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam

(2008) A. Uedono et al.   JOURNAL OF APPLIED PHYSICS

Evidence of compositional inhomogeneity in In[sub x]Ga[sub 1−x]N alloys using ultraviolet and visible Raman spectroscopy.

(2008) Ayan Kar et al.   JOURNAL OF APPLIED PHYSICS

Nitrogen vacancies in InN: Vacancy clustering and metallic bonding from first principles

(2008) X. M. Duan et al.   PHYSICAL REVIEW B