Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN

Stress Adjustment and Bonding of H-Implanted 2 in. Freestanding GaN Wafer: The Concept of Double-Sided Splitting

(2009) O. Moutanabbir et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Mechanisms of ion-induced GaN thin layer splitting

(2009) O. Moutanabbir et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Facile synthesis of highly stablea-Siby ion implantation of low-keV H isotopes

(2009) O. Moutanabbir et al.   PHYSICAL REVIEW B

Atomic Scale Structure of (001) Hydrogen-Induced Platelets in Germanium

(2009) Marie-Laure David et al.   PHYSICAL REVIEW LETTERS

Blistering kinetics of GaN by hydrogen implantation at high temperature

(2009) H.J. Woo et al.   SURFACE & COATINGS TECHNOLOGY

Evidence for ion irradiation induced dissociation and reconstruction of Si–H bonds in hydrogen-implanted silicon

(2008) Z. F. Di et al.   APPLIED PHYSICS LETTERS

Microstructural evolution in H ion induced splitting of freestanding GaN

(2008) O. Moutanabbir et al.   APPLIED PHYSICS LETTERS

Effects of hydrogen implantation temperature on InP surface blistering

(2008) Peng Chen et al.   APPLIED PHYSICS LETTERS

Thermal evolution of defects produced by implantation of H, D and He in Silicon

(2008) P.J. Simpson et al.   APPLIED SURFACE SCIENCE

Vacancy profiles and clustering in light-ion-implanted GaN and ZnO

(2008) F. Tuomisto   APPLIED SURFACE SCIENCE