Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

(2012) Max Shatalov et al.   Applied Physics Express

Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

(2012) Y. Ishikawa et al.   APPLIED PHYSICS LETTERS

Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

(2012) Hideaki Murotani et al.   APPLIED PHYSICS LETTERS

Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams

(2012) A. Uedono et al.   JOURNAL OF APPLIED PHYSICS

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

(2012) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Manufacturability of high power ultraviolet-C light emitting diodes on bulk aluminum nitride substrates

(2012) James R. Grandusky et al.   SOLID-STATE ELECTRONICS

Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN

(2011) Yuki Shimahara et al.   Applied Physics Express

Collateral evidence for an excellent radiative performance of AlxGa1−xN alloy films of high AlN mole fractions

(2011) S. F. Chichibu et al.   APPLIED PHYSICS LETTERS

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

(2011) Yuki Shimahara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

(2010) S. F. Chichibu et al.   APPLIED PHYSICS LETTERS

Identification of extremely radiative nature of AlN by time-resolved photoluminescence

(2010) T. Onuma et al.   APPLIED PHYSICS LETTERS

Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

(2010) Kimihito Ooyama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

(2010) A. Rice et al.   JOURNAL OF APPLIED PHYSICS

Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation

(2009) A. Uedono et al.   JOURNAL OF APPLIED PHYSICS

Direct correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy

(2008) D. Takamizu et al.   JOURNAL OF APPLIED PHYSICS