Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

(2012) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

(2012) Marleen Van Hove et al.   IEEE ELECTRON DEVICE LETTERS

Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors

(2012) Liang Pang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al$_{2}$O$_{3}$/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si

(2011) Hong Zhou et al.   Applied Physics Express

Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

(2011) C. F. Lo et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology

(2011) Hyung-Seok Lee et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky Barriers

(2011) Wei Lu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

(2011) A Malmros et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

(2010) M. Fagerlind et al.   JOURNAL OF APPLIED PHYSICS

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

(2009) Domenica Visalli et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

(2008) Kai Cheng et al.   JAPANESE JOURNAL OF APPLIED PHYSICS