Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method

Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance–light intensity measurement

(2012) M. Matys et al.   APPLIED PHYSICS LETTERS

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

(2011) Michele Esposto et al.   APPLIED PHYSICS LETTERS

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

(2011) Satyaki Ganguly et al.   APPLIED PHYSICS LETTERS

Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

(2011) Chihoko Mizue et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Distribution of donor states on etched surface of AlGaN/GaN heterostructures

(2010) Masataka Higashiwaki et al.   JOURNAL OF APPLIED PHYSICS

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

(2010) M. Fagerlind et al.   JOURNAL OF APPLIED PHYSICS

Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions

(2010) Luke Gordon et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

(2008) Chris Roff et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

(2008) Marcin Miczek et al.   JOURNAL OF APPLIED PHYSICS