CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al$_{2}$O$_{3}$/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si

(2011) Hong Zhou et al.   Applied Physics Express

Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

(2011) Z. H. Liu et al.   APPLIED PHYSICS LETTERS

Characterization of Al2O3/GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

(2011) Xiao-Hua Ma et al.   Chinese Physics B

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

(2011) Jo Das et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology

(2011) Hyung-Seok Lee et al.   IEEE ELECTRON DEVICE LETTERS

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

(2010) Domenica Visalli et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

(2009) Domenica Visalli et al.   JAPANESE JOURNAL OF APPLIED PHYSICS