Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

(2013) X. Sun et al.   APPLIED PHYSICS LETTERS

Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements

(2013) P. Kordoš et al.   APPLIED PHYSICS LETTERS

An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors

(2013) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

High-Quality ICPCVD $\hbox{SiO}_{2}$ for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs

(2013) Bong-Ryeol Park et al.   IEEE ELECTRON DEVICE LETTERS

Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

(2013) Milan Ťapajna et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

(2012) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

High Integrity SiO$_{2}$ Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate

(2012) Hiroshi Kambayashi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

(2011) Chihoko Mizue et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

(2011) Sen Huang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

(2011) K. Čičo et al.   SOLID-STATE ELECTRONICS

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition

(2010) Yujin Hori et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

(2010) Hiroshi Kambayashi et al.   SOLID-STATE ELECTRONICS

Analysis of transient behavior of AlGaN/GaN MOSHFET

(2010) Y. Hayashi et al.   SOLID-STATE ELECTRONICS

Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures

(2009) Milan Ťapajna et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

(2009) M Ťapajna et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY