Simulation of the influence of interface states on capacitance characteristics of insulator/AlGaN/GaN heterojunctions

Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance–light intensity measurement

(2012) M. Matys et al.   APPLIED PHYSICS LETTERS

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

(2012) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures

(2011) T. P. O’Regan et al.   APPLIED PHYSICS LETTERS

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

(2011) Satyaki Ganguly et al.   APPLIED PHYSICS LETTERS

Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

(2011) Chihoko Mizue et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

(2011) Sen Huang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

(2010) M. Fagerlind et al.   JOURNAL OF APPLIED PHYSICS

AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study

(2010) Y. Hayashi et al.   SOLID-STATE ELECTRONICS

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

(2009) Z. H. Liu et al.   APPLIED PHYSICS LETTERS

Simulations of Capacitance–Voltage–Temperature Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures

(2009) Marcin Miczek et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator

(2009) S. Sugiura et al.   SOLID-STATE ELECTRONICS

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

(2008) Marcin Miczek et al.   JOURNAL OF APPLIED PHYSICS

Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

(2008) P. Kordoš et al.   SOLID-STATE ELECTRONICS