On the interface state density at In0.53Ga0.47As/oxide interfaces

Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2

(2009) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

In[sub 0.53]Ga[sub 0.47]As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al[sub 2]O[sub 3], HfO[sub 2], and LaAlO[sub 3] gate dielectrics

(2009) Han Zhao et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

(2008) T. D. Lin et al.   APPLIED PHYSICS LETTERS

Erratum for ‘1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/μm’

(2008) R.J.W. Hill et al.   ELECTRONICS LETTERS

Electrical Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/ \hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

(2008) M. Passlack et al.   IEEE ELECTRON DEVICE LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES