Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

(2008) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Energy state distributions of the Pb centers at the (100), (110), and (111) Si∕SiO2 interfaces investigated by Laplace deep level transient spectroscopy

(2008) L. Dobaczewski et al.   APPLIED PHYSICS LETTERS

In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

(2008) E. O’Connor et al.   APPLIED PHYSICS LETTERS

Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

(2008) Y. C. Chang et al.   APPLIED PHYSICS LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improved Electrical Properties of Gd[sub 2]O[sub 3]∕GaAs Capacitor with Modified Wet-Chemical Clean and Sulfidization Procedures

(2008) Chao-Ching Cheng et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

(2008) G. Brammertz et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Interface Defects in HfO[sub 2], LaSiO[sub x], and Gd[sub 2]O[sub 3] High-k/Metal–Gate Structures on Silicon

(2007) P. K. Hurley et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY