Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

Published 2010 View Full Article

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Title
Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 12, Pages 122105
Publisher
AIP Publishing
Online
2010-03-26
DOI
10.1063/1.3367708

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