Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

(2014) Jeehwan Kim et al.   Nature Communications

Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings

(2013) Lee-Woon Jang et al.   ACS Applied Materials & Interfaces

Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

(2013) A. J. Trindade et al.   APPLIED PHYSICS LETTERS

A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

(2012) Toshiki Makimoto et al.   Applied Physics Express

RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond

(2012) Kazuyuki Hirama et al.   IEEE ELECTRON DEVICE LETTERS

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

(2012) Yasuyuki Kobayashi et al.   NATURE

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

(2011) Kazuyuki Hirama et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN HEMT on (111) single crystalline diamond

(2010) M. Alomari et al.   ELECTRONICS LETTERS

Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE

(2008) Y. Kobayashi et al.   JOURNAL OF CRYSTAL GROWTH