Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

Published 2015 View Full Article

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Title
Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor
Authors
Keywords
-
Journal
Chinese Physics B
Volume 24, Issue 4, Pages 048503
Publisher
IOP Publishing
Online
2015-04-01
DOI
10.1088/1674-1056/24/4/048503

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