Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation

Published 2009 View Full Article

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Title
Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 4, Pages 04C083
Publisher
Japan Society of Applied Physics
Online
2009-04-20
DOI
10.1143/jjap.48.04c083

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