Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition

High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures

(2010) J. Song et al.   APPLIED PHYSICS LETTERS

205-GHz (Al,In)N/GaN HEMTs

(2010) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

(2009) M. Alomari et al.   IEEE ELECTRON DEVICE LETTERS

Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures

(2008) Makoto Miyoshi et al.   Applied Physics Express

Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN

(2008) H. P. D. Schenk et al.   APPLIED PHYSICS LETTERS

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

(2008) M. Gonschorek et al.   JOURNAL OF APPLIED PHYSICS