Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors

Published 2015 View Full Article

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Title
Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors
Authors
Keywords
AlInN/AlN/GaN HEMTs, Direct current characteristics, Self heating, Trapping effects
Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 84, Issue -, Pages 113-125
Publisher
Elsevier BV
Online
2015-05-08
DOI
10.1016/j.spmi.2015.04.036

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