Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced $I$ – $V$ Characteristic for Switching Applications

Published 2016 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced $I$ – $V$ Characteristic for Switching Applications
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 7, Pages 855-858
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-06-03
DOI
10.1109/led.2016.2575040

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.