Considerations for Ultimate CMOS Scaling

Ohm's Law Survives to the Atomic Scale

(2012) B. Weber et al.   SCIENCE

Defect states at III-V semiconductor oxide interfaces

(2011) L. Lin et al.   APPLIED PHYSICS LETTERS

Effects of Surface Orientation on the Performance of Idealized III–V Thin-Body Ballistic n-MOSFETs

(2011) Raseong Kim et al.   IEEE ELECTRON DEVICE LETTERS

Maximized Benefit of La–Al–O Higher-$k$ Gate Dielectrics by Optimizing the La/Al Atomic Ratio

(2011) Hiroaki Arimura et al.   IEEE ELECTRON DEVICE LETTERS

Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

(2011) Brian E. Coss et al.   IEEE ELECTRON DEVICE LETTERS

Process Technology Variation

(2011) Kelin J. Kuhn et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomic layer deposition of Al2O3 on S-passivated Ge

(2011) S. Sioncke et al.   MICROELECTRONIC ENGINEERING

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

(2011) Isabelle Ferain et al.   NATURE

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Heteroepitaxy of single-crystal LaLuO3 on GaAs(111)A by atomic layer deposition

(2010) Yiqun Liu et al.   APPLIED PHYSICS LETTERS

Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs

(2010) Leonardo Gomez et al.   IEEE ELECTRON DEVICE LETTERS

High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology

(2010) Florence Bellenger et al.   IEEE ELECTRON DEVICE LETTERS

Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications

(2010) Matthias Passlack et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Quantum Confinement Effects in Capacitance Behavior of Multigate Silicon Nanowire MOSFETs

(2010) Aryan Afzalian et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces

(2010) Weichao Wang et al.   Journal of Physical Chemistry C

Resistivity of thin Cu films coated with Ta, Ti, Ru, Al, and Pd barrier layers from first principles

(2010) Ferdows Zahid et al.   PHYSICAL REVIEW B

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

(2009) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Air-Spacer MOSFET With Self-Aligned Contact for Future Dense Memories

(2009) Jemin Park et al.   IEEE ELECTRON DEVICE LETTERS

Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization

(2009) Duygu Kuzum et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling the effects of applied stress and wafer orientation in silicon devices: from long channel mobility physics to short channel performance

(2009) R. Kotlyar et al.   Journal of Computational Electronics

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

(2008) Ning Li et al.   APPLIED PHYSICS LETTERS

High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants

(2008) G. Hellings et al.   IEEE ELECTRON DEVICE LETTERS

Bandstructure Effects in Silicon Nanowire Electron Transport

(2008) Neophytos Neophytou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES