Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

Title
Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 7, Pages 862-864
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-05-27
DOI
10.1109/led.2011.2148091

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started