High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology

Investigation of capacitance–voltage characteristics in Ge /high-κ MOS devices

(2009) M. Moreau et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf)

(2008) M. Houssa et al.   APPLIED PHYSICS LETTERS

GeOx interface layer reduction upon Al-gate deposition on a HfO2∕GeOx∕Ge(001) stack

(2008) Sylvie Rangan et al.   APPLIED PHYSICS LETTERS

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(2008) Hiroshi Matsubara et al.   APPLIED PHYSICS LETTERS

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

(2008) Duygu Kuzum et al.   IEEE ELECTRON DEVICE LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments

(2007) F. Bellenger et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY