Quantum Confinement Effects in Capacitance Behavior of Multigate Silicon Nanowire MOSFETs

Published 2010 View Full Article

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Title
Quantum Confinement Effects in Capacitance Behavior of Multigate Silicon Nanowire MOSFETs
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 10, Issue 2, Pages 300-309
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-01-13
DOI
10.1109/tnano.2009.2039800

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