Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

标题
Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 3, Pages 402-404
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-02-01
DOI
10.1109/led.2014.2300013

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